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| TNY253GN-TL资料 | |
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TNY253GN-TL PDF Download |
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File Size : 105 KB
Manufacturer:POWER Description:Addresses and data needed for the programming and erase operations are internally latched during write cycles, and the host system can detect completion of a program or erase operation by observing the RY/BY# pin, or by reading the DQ[7] (Data# Polling) and DQ[6] (toggle) status bits. Reading data from the device is similar to reading from SRAM or EPROM devices. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：TNY253GN-TL 厂 家：POWER 封 装：07+ 批 号：897 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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