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SNJ54LS283J资料 | |
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SNJ54LS283J PDF Download |
File Size : 105 KB
Manufacturer:TI Description: This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:SNJ54LS283J 厂 家:TI 封 装:0449+ 批 号:3 数 量: 说 明: |
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运 费: 所在地: 新旧程度: |
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联系人:张小姐、 颜先生13661569158 |
电 话:400-878-9158,021-54286636 |
手 机:13661569158 |
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公司地址: 上海市古楼公路348弄25号 |