 |
|||||||
|
|||||||
|
|
|||||||
|
|||||||
|
|
| SN75450BN资料 | |
|
SN75450BN PDF Download |
|
File Size : 105 KB
Manufacturer:TI Description:Notes: 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I OL/IOH and 30-pF load capacitance. 6. t HZOE, tHZCE, tHZWE, and tHZBE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 7. At any given temperature and voltage condition, t HZCE is less than tLZCE, tHZOE is less than tLZOE, tHZWE is less than tLZWE, and tHZBE is less than tLZBE, for any given device. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Refer to truth table for further conditions from BHE and BLE. |
|
| 相关型号 | |
| ◆ PXV1220S-3DB-N1 | |
| ◆ UF2492M388 | |
| ◆ Z86E0812PSC | |
| ◆ Z8622704PSC | |
| ◆ Z85C3008VSC | |
| ◆ Z8523010VSC | |
| ◆ Z84C9010VSC | |
| ◆ Z80SIO | |
| ◆ Z8028012VSC | |
| ◆ Z8018010VSC | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
|
型 号：SN75450BN 厂 家：TI 封 装：03+ 批 号：25 数 量： 说 明： |
|||||
|
运 费： 所在地： 新旧程度： |
|||||
| 联系人：张小姐、 颜先生13661569158 |
| 电 话：400-878-9158,021-54286636 |
| 手 机：13661569158 |
| QQ：12230627,596815151,531081618 |
| MSN： |
| 传 真：021-54286636 |
| EMail：susumu@susumu.com.cn |
| 公司地址： 上海市古楼公路348弄25号 |
建议使用分辨率:1024*768