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| SN75185N资料 | |
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SN75185N PDF Download |
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File Size : 105 KB
Manufacturer:TI Description:Honeywells enhanced SOI RICMOS™ IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate lengthLeff). Additional features include tungsten via plugs, Honeywells proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：SN75185N 厂 家：TI 封 装：02+03+ 批 号：123 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：张小姐、 颜先生13661569158 |
| 电 话：400-878-9158,021-54286636 |
| 手 机：13661569158 |
| QQ：12230627,596815151,531081618 |
| MSN： |
| 传 真：021-54286636 |
| EMail：susumu@susumu.com.cn |
| 公司地址： 上海市古楼公路348弄25号 |
建议使用分辨率:1024*768