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| SN74ALS373N资料 | |
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SN74ALS373N PDF Download |
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File Size : 105 KB
Manufacturer:TI Description:other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed num- ber of locations in a programmed sequence. The registra- tion of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations or full page, with a burst terminate option. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：SN74ALS373N 厂 家：TI 封 装：04+ 批 号：200 数 量： 说 明： |
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