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SN5400J资料 | |
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SN5400J PDF Download |
File Size : 105 KB
Manufacturer:TI Description:Constructed with Intersils dielectrically isolated, radiation hardened silicon gate (RSG) BiCMOS process, these devices are immune to single event latchup. Additionally, the design has been hardened to prevent single event transients (SETs) in excess of 1V for LETs up to 36MeV/mg/cm2. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:SN5400J 厂 家:TI 封 装:0612+ 批 号:244 数 量: 说 明: |
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运 费: 所在地: 新旧程度: |
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