 |
|||||||
|
|||||||
|
|
|||||||
|
|||||||
|
|
| MC100E111FN资料 | |
|
MC100E111FN PDF Download |
|
File Size : 105 KB
Manufacturer:MOT Description: This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. |
|
| 相关型号 | |
| ◆ PXV1220S-3DB-N1 | |
| ◆ UF2492M388 | |
| ◆ Z86E0812PSC | |
| ◆ Z8622704PSC | |
| ◆ Z85C3008VSC | |
| ◆ Z8523010VSC | |
| ◆ Z84C9010VSC | |
| ◆ Z80SIO | |
| ◆ Z8028012VSC | |
| ◆ Z8018010VSC | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
|
型 号：MC100E111FN 厂 家：MOT 封 装：92+ 批 号：15 数 量： 说 明： |
|||||
|
运 费： 所在地： 新旧程度： |
|||||
| 联系人：张小姐、 颜先生13661569158 |
| 电 话：400-878-9158,021-54286636 |
| 手 机：13661569158 |
| QQ：12230627,596815151,531081618 |
| MSN： |
| 传 真：021-54286636 |
| EMail：susumu@susumu.com.cn |
| 公司地址： 上海市古楼公路348弄25号 |
建议使用分辨率:1024*768