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| LM2907N-8资料 | |
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LM2907N-8 PDF Download |
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File Size : 105 KB
Manufacturer:NS Description:As with any semiconductor device, some of the characteristics of HEXFET Power MOSFETs are temperature dependent. For tests in which there is significant heating of the HEXFET Power MOSFET, a low repetition rate should be used. For tests involving a slow transition through the linear region, a damping resistor of at least 10 ohms should be connected in series with the gate, close to the gate lead to prevent oscillations. If frequent testing of MOS-gated devices is expected, the use of a test fixture that plugs directly into the curve tracer would save a significant amount time. Such a fixture is descibed in Section 12. MOS-gated transistors are static sensitive. Wrist straps, grounding mats and other ESD precautions must be followed, as indicated in INT-955. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：LM2907N-8 厂 家：NS 封 装：97+ 批 号：38 数 量： 说 明： |
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