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| IP4776CZ38资料 | |
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IP4776CZ38 PDF Download |
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File Size : 105 KB
Manufacturer:NXP Description:The SRAM will not latch up due to any of the above radiation exposure conditions when applied under recommended operating conditions. Fabrication with the SIMOX substrate material provides oxide isolation between adjacent PMOS and NMOS transistors and eliminates any potential SCR latchup structures. Sufficient transistor body tie connec- tions to the p- and n-channel substrates are made to ensure no source/drain snapback occurs. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：IP4776CZ38 厂 家：NXP 封 装：0740+ 批 号：2480 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：张小姐、 颜先生13661569158 |
| 电 话：400-878-9158,021-54286636 |
| 手 机：13661569158 |
| QQ：12230627,596815151,531081618 |
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