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| IDT7130SA100P资料 | |
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IDT7130SA100P PDF Download |
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File Size : 105 KB
Manufacturer:IDT Description:All FIFO configurations will meet all stated functional and electrical specifications over the entire operating tempera- ture range after the specified total ionizing radiation dose. All electrical and timing performance parameters will re- main within specifications after rebound at VDD = 5.5 V and T = 125C extrapolated to ten years of operation. Total dose hardness is assured by wafer level testing of process monitor transistors and product using 10 KeV X-ray and radiation sources. Transistor gate threshold shift correla- tions have been made between 10 KeV X-rays applied at a dose rate of 1x105 rad(SiO2)/min at T = 25C and gamma rays (Cobalt 60 source) to ensure that wafer level X-ray testing is consistent with standard military radiation test environments. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：IDT7130SA100P 厂 家：IDT 封 装：94+ 批 号：10 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：张小姐、 颜先生13661569158 |
| 电 话：400-878-9158,021-54286636 |
| 手 机：13661569158 |
| QQ：12230627,596815151,531081618 |
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| 传 真：021-54286636 |
| EMail：susumu@susumu.com.cn |
| 公司地址： 上海市古楼公路348弄25号 |
